transistor(npn) features z high breakdown voltage z low collector-emitter saturation voltage z complementary to mmbta92 (pnp) marking: 1d maximum ratings (t a =25 unless otherwise noted) electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo i c = 100 a, i e =0 300 v collector-emitter breakdown voltage v (br)ceo i c = 1ma, i b =0 300 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb =200v, i e =0 0.25 a emitter cut-off current i ebo v eb = 5v, i c =0 0.1 a h fe(1) v ce = 10v, i c = 1ma 60 h fe(2) v ce = 10v, i c =10ma 100 200 dc current gain h fe(3) v ce =10v, i c =30ma 60 collector-emitter saturation voltage v ce (sat) i c =20ma, i b = 2ma 0.2 v base-emitter saturation voltage v be (sat) i c = 20ma, i b =2ma 0.9 v transition frequency f t v ce = 20v, i c = 10ma, f= 30mhz 50 mhz symbol parameter value units v cbo collector-base voltage 300 v v ceo collector-emitter voltage 300 v v ebo emitter-base voltage 5 v i c collector current -continuous 0.3 a p c collector power dissipation 0.35 w r ? ja thermal resistance, junction to ambient 357 /mw t j junction temperature 150 t stg storage temperature -55to +150 sot-23 1. base 2. emitter 3. collector MMBTA42 1 date:2011/05 www.htsemi.com semiconductor jinyu
MMBTA42 2 date:2011/05 www.htsemi.com semiconductor jinyu
MMBTA42 3 date:2011/05 www.htsemi.com semiconductor jinyu
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